IBM’s Memory Breakthrough Will Speed Up IoT and Machine Learning

IBM researchers have just revealed a new storage memory breakthrough that has the potential to speed up machine learning and access to the Internet of Things (IoT), as well as mobile phone apps and cloud storage.For the first time, scientists have demonstrated reliably storing three bits of data per cell using a new memory technology known as phase-change memory (PCM).While memory types span from DRAM to hard disk drives to flash, over the past few years, PCM has become quite popular in the industry as well, due to its combination of read/write speed, endurance, non-volatility and density.The experimental multi-bit PCM chip used by IBM scientists is connected to a standard integrated circuit board.For example, unlike DRAM, PCM doesn’t lose data when powered off, and it can endure at least 10 million…


Link to Full Article: IBM’s Memory Breakthrough Will Speed Up IoT and Machine Learning

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